View IXTK140N20P_110335.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Advanced Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTK 140N20P
VDSS ID25
RDS(on)
= 200 V = 140 A = 18 m
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M
Maximum Ratings 200 200 20 V V V A A A A mJ J V/ns W C C C C
TO-264(SP) (IXTK)
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
140 75 280 60 100 4 10 800 -55 ... +175 175 -55 ... +150
G
D
(TAB) S
G = Gate S = Source
D = Drain TAB = Drain
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. 10 g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150C
Characteristic Values Min. Typ. Max. 200 2.5 5.0 200 25 250 18 14 V V nA A A m m
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 140A Pulse test, t 300 s, duty cycle d 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99194(07/04)
(c) 2004 IXYS All rights reserved
IXTK 140N20P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 50 84 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 280 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 35 150 90 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 100 S pF pF pF ns ns ns ns nC nC nC 0.18 K/W 0.15 K/W TO-264(SP) Outline (IXTK)
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 140 280 1.5 120 3.5 A A V ns C
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXTK 140N20P
Fig. 1. Output Characteristics @ 25C
140 120 100 VGS = 10V 9V 8V 300 270 240 210 8V VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
80 7V 60 40 20 5V 0 0 0.5 1 1.5 2 2.5
180 150 120 90 60 30 0 0 1 2 3
7V 6V
6V
V D S - Volts Fig. 3. Output Characteristics @ 150C
140 120 100 VGS = 10V 9V 8V 3 VGS = 10V
V D S - Volts
4
5
6
7
8
9
10
Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature
R D S ( o n ) - Normalized
2.5 I D = 140A 2 I D = 70A 1.5
I D - Amperes
80 60 40 20 0 0 1 2
7V
6V
5V
1
0.5
V D S - Volts
3
4
5
6
-50
-25
0
TJ - Degrees Centigrade
25
50
75
100
125
150
175
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . Drain Curre nt
4 TJ = 175C 3.5 90 80 70 3 2.5 2 1.5 20 1 0.5 0 50 100 TJ = 25C 150 200 250 300 10 0 VGS = 15V
Fig. 6. Drain Curre nt vs . Cas e Tem pe rature
External Lead Current Limit
R D S ( o n ) - Normalized
I D - Amperes
60 50 40 30
VGS = 10V
I D - Amperes
-50
-25
0
TC - Degrees Centigrade
25
50
75
100
125
150
175
(c) 2004 IXYS All rights reserved
IXTK 140N20P
Fig. 7. Input Adm ittance
225 200 175 120 110 100 90
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
150 125 100 75 50 25 0 4 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 150C 25C -40C
80 70 60 50 40 30 20 10 0 0 40 80 120 160 200 240 TJ = -40C 25C 150C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 250 10 9 8 VDS = 100V I D = 70A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
7
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4
200 150 100 50 0
6 5 4 3 2 1 0
V S D - Volts
0
25
50
Q G - nanoCoulombs
75
100 125 150 175 200 225 250
Fig. 11. Capacitance
100,000 1000
Fig. 12. Forw ard-Bias Safe Operating Area
TJ = 175C R DS(on) Limit TC = 25C 25s
f = 1MHz
Capacitance - picoFarads
10,000
I D - Amperes
Ciss
Coss
1,000
100
100s
1ms
Crss
DC 100 0 5 10 15 10
10ms
V DS - Volts
20
25
30
35
40
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK 140N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01
0.00 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2004 IXYS All rights reserved

▲Up To Search▲

Price & Availability of IXTK140N20P

	To Download IXTK140N20P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .